Obtaining p-type ZnO films by the RBQE method

Butkhuzi, T.V., Khulordava, T.G., Sharvashidze, M.M., Bukhsianidze, N.G., Gaphishvili, N.G., Trapaidze, L.T., Kekelidze, E.E., Melkadze, R.G.

Nanotechnology Perceptions, 4 (3), 2008, pp. 257-264

Silver doped p-type ZnS crystals

Butkhuzi T.V., Tchelidze T.G., Chikoidze E.G., Kekelidze N.P.

Physica Status Solidi (B) Basic Research, 229 (1), 2002, pp. 365-370

The regulation of defect concentrations by means of separation layer in wide-band II-VI compounds

Butkhuzi T.V., Sharvashidze M.M., Gamkrelidze N.M., Gelovani Kh.V., Khulordava T.G., Kekelidze N.P., Kekelidze E.E.

Semiconductor Science and Technology, 16 (7), 2001, pp. 575-580

Polaritons in exciton photoluminescence of ZnO at a high level of excitation

Butkhuzi T., Khulordava T., Natsvlishvili G., Peikrishvili D., Sharvashidze M.

Physica Status Solidi (B) Basic Research, 221 (1), 2000, pp. 313-317